Part Number: F2HNK60Z, STF2HNK60Z
Function: N-Channel 600V, Power MOSFET
Package: TO-220FP Type
Manufacturer: STMicroelectronics
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Summary :
STQ2HNK60ZR-AP STF2HNK60Z – STD2HNK60Z-1 N-CHANNEL 600V – 4.4Ω – 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET TYPE STQ2HNK60ZR-AP STD2HNK60Z-1 STF2HNK60Z VDSS 600 V 600 V 600 V RDS(on) < 4.8 Ω < 4.8 Ω < 4.8 Ω ID 0.5 A 2.0 A 2.0 A PW 3W 45 W 20 W 3 1 2 TYPICAL RDS(on) = 4.4Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) TO-220FP 3 2 1 IPAK
Description
The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM Applications AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ORDER CODES PART NUMBER STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z MARKING D2HNK60Z Q2HNK60ZR F2HNK60Z PACKAGE IPAK TO-92 TO-220FP PACKAGING TUBE AMMOPAK TUBE April 2004 1/12 Free Datasheet http://www.nDatasheet.com STQ2HNK60ZR-AP – STF2HNK60Z – STD2HNK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter IPAK Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -2.0 1.26 8 45 0.36 Value TO-220FP 600 600 ± 30 2.0 (*) 1.26 (*) 8 (*) 20 0.16 2000 4.5 2500 -55 to 150 -0.5 0.32 2 3 0.025 TO-92 V V V A A A W W/°C V V/ns V °C Unit ( ) Pulse width limited by safe operating area (1) ISD ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Current Limited by package THERMAL DATA IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 2.77 100 -300 TO-220FP 6.25 62.5 -300 TO-92 -120 40 260 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 2 120 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION Features OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be appl […]