Part Number: FQPF10N20
Function: 200V, 6.8A, N-Channel MOSFET
Package: TO-220F Type
Manufacturer: Fairchild Semiconductor
FQPF10N20 is 200V, 6.8A, N-Channel MOSFET. The N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
1. Low Gate Charge (Typ. 20 nC
2. Low Crss (Typ. 40.5 pF)
3. 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
4. 100% Avalanche Tested