Part Number: FTU01N60
Marking : 01N60
Function: 600V N-Channel MOSFET
Package: TO-251 ( I-PAK ) Type
Manufacturer: ark
Images:
1 page
Description
This is 600V, 1A, N-Channel MOSFET.
General
Features
Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/Battery Chargers FTU01N60/FTD01N60 BVDSS 600V RDS(ON) (Max.) 9.0Ω ID 1.0A
Ordering Information Part Number Package:
FTU01N60 TO-251（I-PAK） FTU01N60G TO-251（I-PAK） FTD01N60 TO-252（D-PAK） FTD01N60G TO-252（D-PAK） Marking 01N60 01N60G 01N60 01N60G Remark RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol VDSS Parameter Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100℃ IDM PD Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=40mH, ID=1.0A Peak Diode Recovery dv/dt[3] TL Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Storage Temperature Range TC=25℃ unless otherwise specified FTU01N60 FTD01N60 Unit 600 V 1.0 Figure 3 A Figure 6 29 W 0.23 W/℃ ±30 V 20 mJ 4.5 V/ns 300 -55 to 150 ℃ Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ARK Microelectronics Co., Ltd. w w w. a r k – m i c r o . c o m 1/11 Rev. 2.1 Jan. 2012 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient FTU01N60/FTD01N60 FTU01N60 FTD01N60 4.3 100 Unit ℃/W Electrical Characteristics OFF Characteristics Symbol Parameter TC =25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V, ID=250µA △BVDSS/△TJ Breakdown Voltage Temperature Coefficient […]