Part Number: G30N60HS
Function: 600V, 30A, High Speed IGBT
Package: TO-220-3, TO-247-3 Type
Manufacturer: Infineon
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Description
A 600V IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device used for switching and amplifying electrical signals in various applications, particularly in power electronics and motor control systems.
IGBTs are widely used in industrial and commercial applications where high voltage and current levels are involved. They offer advantages such as fast switching speeds, high power handling capabilities, and low conduction losses. The combination of the voltage rating and IGBT technology allows for efficient power control and conversion in various systems.
Features :
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Package SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls – EAS VGE tSC Ptot Tj , Tstg Tj(tl) – 600 41 30 112 112 165 ±20 ±30 10 250 -55…+150 175 260 Unit V A mJ V µs W °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 Max. Value 0.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance [ … ]
G30N60HS PDF Datasheet
