IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Part Number: G40N60UFD, FGA40N60UFD

Function: 600V, 40A, IGBT

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Images:G40N60UFD pdf pinout


G40N60UFD is 600V, Ultrafast IGBT. Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.


• High speed switching

• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

[…]G40N60UFD datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 600 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 40 A

4. Drain power dissipation: PD = 160 W

5. Operating Junction Temperature: Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C


1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G40N60UFD PDF Datasheet