Part Number: G4BC20KD, IRG4BC20KD
Function: 600V, 16A, IGBT ( INSULATED GATE BIPOLAR TRANSISTOR )
Package: TO-220AB Type
Manufacturer: International Rectifier
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Description
G4BC20KD is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Benefits:
• Latest generation 4 IGBTs offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
• This part replaces the IRGBC20KD2 and IRGBC20MD2 products
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter Voltage: Vces = 600 V
2. Gate to emitter Voltage: Vges = ± 20 V
3. Collector Current: Ic = 16 A
4. Collector Dissipation: Pc = 60 W
5. Junction temperature: Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
G4BC20KD PDF Datasheet
