G4BC30KD PDF – 600V, 16A, IGBT – IRG4BC30KD

Part Number: G4BC30KD, IRG4BC30KD

Function: 600V, 16A, IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Images:G4BC30KD pinout pdf



IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.


• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

• Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-ch an nel

G4BC30KD datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 600 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 28 A

4. Drain power dissipation: PD = 100 W

5. Operating Junction Temperature: Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C


• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC30KD2 and IRGBC30MD2 products • For hints see design tip 97003


G4BC30KD PDF Datasheet