G4PC40W PDF – IRG4PC40W ( 600V, IGBT, TO-247AC )

Part Number: G4PC40W, IRG4PC40W

Function: 600V, IGBT ( The IGBT is insulated-gate bipolar transistor. )

Package: TO-247AC type

Manufacturer: IRF

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G4PC40W image

Description

THE G4PC40W IS INSULATED GATE BIPOLAR TRANSISTOR.

Features

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

• Industry-benchmark switching losses improve efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel

Benefits

• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC

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pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Collector-to-Emitter Breakdown Voltage : Vces = 600 V
2. Continuous Collector Current : 40 A
3. Pulsed Collector Current: Icm = 160 A
4. Maximum Power Dissipation : PD = 160 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

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G4PC40W Datasheet