Part Number: G4PC50UD, IRG4PC50UD
Function: 600V, 55A, IGBT
Package: TO-247AC type
Manufacturer: International Rectifier
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Description
G4PC50UD is 600V, 55A, IGBT. An “Insulated Gate Bipolar Transistor (IGBT) with UltraFast Soft Recovery Diode” is a specific type of power semiconductor device that combines an IGBT and an ultrafast diode in a single package. This combination offers several advantages in high-power switching applications, such as motor drives, power inverters, and other power electronics systems.
Let’s break down the key components:
1. IGBT (Insulated Gate Bipolar Transistor): The IGBT is a type of transistor that combines the features of a MOSFET (voltage-controlled) and a BJT (current-controlled). It is widely used in high-power applications due to its ability to handle high voltage and current while being easily controllable with a low-power signal.
2. UltraFast Soft Recovery Diode: The diode integrated into the IGBT package is an “UltraFast Soft Recovery Diode.” Diodes are used as freewheeling or rectification elements in power electronic circuits. An UltraFast Soft Recovery Diode has a short reverse recovery time, which means it can switch off quickly when the current direction changes, reducing switching losses and improving overall efficiency.
Features:
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Benefits:
• Generation 4 IGBT’s offer highest efficiencies available
• IGBT’s optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing
• Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s
Absolute Maximum Ratings (Tc = 25°C)
1. Collector to emitter Voltage: Vces = 600 V
2. Gate to emitter Voltage: Vges = ± 20 V
3. Collector Current: Ic = 55 A
4. Maximum Power Dissipation: Pc = 200 W
5. Junction temperature: Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
G4PC50UD PDF Datasheet
