Part Number: G4PC50UD, IRG4PC50UD
Function: 600V, 55A, IGBT
Package: TO-247AC type
Manufacturer: International Rectifier
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Description
PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits • Generation 4 IGBT’s offer highest efficiencies available • IGBT’s optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing • Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case – IGBT Junction-to-Case – Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ————————- Typ. ———-0.24 —-6 (0.21) Max. 0.64 0.83 —–40 —— Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4PC50UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 ——V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —- 0.60 —V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage —- 1.65 2.0 IC = 27A VGE = 15V —- 2.0 —V IC = 55A See Fig. 2, 5 —- 1.6 —IC = 27A, TJ = 150°C Gate Threshold Voltage 3.0 —- 6.0 VCE = VGE, IC = 250µA VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage —- -13 —- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 16 24 —S VCE = 100V, IC = 27A Zero Gate Voltage Collector Current ——- 250 µA VGE = 0V, VCE = 600V ICES ——- 6500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop —- 1.3 1.7 V IC = 25A See Fig. 13 —- 1.2 1.5 IC = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ——- ±100 nA VGE = ±20V V(BR)CES Switching Characteris […]
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