Part Number: G4PF50W, IRG4PF50W
Function: 900V, 51A, IGBT, Transistor
Package: TO-247AC type
Manufacturer: International Rectifier
Images:
Description
G4PF50W is 900V, 51A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
1. Optimized for use in Welding and Switch-Mode Power Supply applications
2. Industry benchmark switching losses improve efficiency of all power supply topologies
3. 50% reduction of Eoff parameter
4. Low IGBT conduction losses
5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 900 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 51 A (Tc = 25°C)
4. Collector dissipation : Pc = 200 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
G4PF50W PDF Datasheet
