G4PF50W Transistor – 900V, 51A, IGBT ( IRG4PF50W )

Part Number: G4PF50W, IRG4PF50W

Function: 900V, 51A, IGBT, Transistor

Package: TO-247AC type

Manufacturer: International Rectifier

Images:G4PF50W pdf igbt


G4PF50W is 900V, 51A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.


1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

G4PF50W datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A (Tc = 25°C)

4. Collector dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


G4PF50W PDF Datasheet