Part Number: G4PH40KD, IRG4PH40KD
Function: 1200V, UltraFast IGBT
Package: TO-247AC type
Manufacturer: IRF
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Description
G4PH40KD is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
Benefits:
• Latest generation 4 IGBT’s offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
• This part replaces the IRGPH40KD2 and IRGPH40MD2 products
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter Voltage: Vces = 1200 V
2. Gate to emitter Voltage: Vges = ± 20 V
3. Collector Current: Ic = 30 A
4. Maximum Power Dissipation: Pc = 160 W
5. Junction temperature: Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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G4PH40KD PDF Datasheet
