Part Number: G4PH40KD, IRG4PH40KD
Function: 1200V, UltraFast IGBT
Package: TO-247AC type
Manufacturer: IRF
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Description
This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 2.74V @VGE = 15V, IC = 15A n-ch an nel Benefits • Latest generation 4 IGBT’s offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGPH40KD2 and IRGPH40MD2 products • For hints see design tip 97003 TO-247AC
Absolute Maximum Ratings :
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 1200 30 15 60 60 8.0 130 10 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case – IGBT Junction-to-Case – Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.77 1.7 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 2/7/2000 Free Datasheet http:// IRG4PH40KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 1200 — — V Temperature Coeff. of Breakdown Voltage — 0.37 — V/°C Collector-to-Emitter Saturation Voltage — 2.74 3.4 — 3.29 — V — 2.53 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -3.3 — mV/°C Forward Transconductance T 8.0 12 — S Zero Gate Voltage Collector Current — — 250 µA — — 3000 Diode Forward Voltage Drop — 2.6 3.3 V — 2.4 3.1 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 15A VGE = 15V IC = 30A See Fig. 2, 5 IC = 15A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 15A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 8.0A See Fig. 13 IC = 8.0A […]
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