This post explains for the IGBT.
The Part Number is G4PH50UD, IRG4PH50UD.
The function of this semiconductor is 1200V, 24A, UltraFast CoPack IGBT.
The packag is TO-247AC Type
Manufacturer: International Rectifier
Preview images :
Description
G4PH50UD IS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Absolute Maximum Ratings (Tc = 25°C)
1. Collector to Emitter Voltage: Vces = 1200 V
2. Gate to Emitter Voltage: VGes = ± 20 V
3. Collector Current: Ic = 45 A
4. Drain power dissipation: PD = 200 W
5. Operating Junction Temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Benefits:
• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing
G4PH50UD PDF Datasheet
