GIB10B60KD1 PDF Datasheet – 600V, 16A, IGBT

This post explains for the IGBT.

The Part Number is GIB10B60KD1, IRGIB10B60KD1.

The function of this semiconductor is 600V, 16A, IGBT.

Manufacturer: International Rectifier

Preview images :GIB10B60KD1 pinout datasheet

Description

This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature Rated at 175°C

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A

4. Collector dissipation : Pc = 44 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C

GIB10B60KD1 pdf

Benefits :

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI. • Excellent Current Sharing in Parallel Operation.  […]

 

GIB10B60KD1 PDF Datasheet