This post explains for the IGBT.
The Part Number is GP20B60PD, IRGP20B60PD.
The function of this semiconductor is 600V, 40A, SMPS IGBT.
The package is TO-247AC type
Manufacturer: IRF
Preview images :
Description
GP20B60PD is SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliabilit
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter Voltage: Vces = 600 V
2. Gate to Emitter Voltage: VGes = ± 20 V
3. Collector Current: Ic = 40 A
4. Power dissipation: PD = 220 W
5. Operating Junction Temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
GP20B60PD PDF Datasheet
