Part Number: GW45HF60WD, STGW45HF60WD
Function: 45A, 600V, Ultra fast IGBT
Package: TO-247 Type
Manufacturer: ST Microelectronics
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
GW45HF60WD is 45A, 600V, Ultra fast IGBT. The “HF” series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix “W” denotes a subset of products tailored to high switching frequency operation over 100 kHz. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW45HF60WD Package TO-247 Packaging Tube Order code STGW45HF60WD August 2009 Doc ID 15593 Rev 2 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1. Improved Eoff at elevated temperature
2. Low CRES / CIES ratio (no cross-conduction susceptibility)
3. Ultra fast soft recovery antiparallel diode
2. High frequency converters
3. Power factor correction