H25R1202 PDF Datasheet – 1200V, 25A, IGBT

Part Number: H25R1202, IHW25N120R2

Function: 1200V, 25A, Reverse Conducting IGBT

Package: TO-247-3 Type

Manufacturer: Infineon

Images:H25R1202 pdf pinout


H25R1202 is 1200V, 25A, Reverse Conducting IGBT with monolithic body diode. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.


• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1200 V applications offers :
(1) very tight parameter distribution
(2) high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant


H25R1202 igbt datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 1200 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 50 A

4. Drain power dissipation: Ptot = 365 W

5. Operating Junction Temperature: Tch = -40 to +175 °C

6. Storage temperature: Tstg = -55 to +175 °C


• Inductive Cooking

• Soft Switching

H25R1202 PDF Datasheet