This is one of the types of MOSFETs and is a kind of transistor.
Part Number: H6NA80FI
Function: N-Channel MOSFET ( 800V, 3.4A )
Pakcage : TO-247, ISOWATT218 Type
Manufacturer: ST Microelectronics
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Description
This is N-Channel 800V, 3.4A, Fast Power MOS Transistor.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
H6NA80FI Features
1. TYPICAL RDS(on) = 1.8 Ω
2. AVALANCE RUGGED TECHNOLOGY
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100 °C
5. LOW GATE CHARGE
6. VERY HIGH CURRENT CAPABILITY
7. APPLICATION ORIENTED CHARACTERIZATION
Applications
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SOLENOID AND RELAY DRIVERS
3. REGULATORS
4. DC-DC & DC-AC CONVERTERS
5. MOTOR CONTROL, AUDIO AMPLIFIERS
6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 800 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3.4 A
4. Power Dissipation : Ptot = 60 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C