Part Number: HY1606AP
Function: 60V, 60A, N-Channel Enhancement Mode MOSFET
Package: TO-220 Type
Manufacturer: HOOYI Semicondcutor
Images:
Description
The HY1606AP is 60V, 60A, N-Channel Enhancement Mode MOSFET.
Features
1. 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V
2. Avalanche Rated
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 65 A
4. Total Power Dissipation: Pd = 130 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
• Power Management for Inverter Systems.
HY1606AP PDF Datasheet
