Part Number: HY1606AP
Function: 60V, 60A, N-Channel Enhancement Mode MOSFET
Package: TO-220 Type
Manufacturer: HOOYI Semicondcutor
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Description
The HY1606AP is N-Channel Enhancement Mode MOSFET.
Features
1. 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V
2. Avalanche Rated
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
Applications:
• Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1606A ÿ YYWWJ G P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi-semi.com Free Datasheet http://www.datasheet-pdf.com/ HY1606AP Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Energy 2 www.hooyi-semi.com Free Datasheet http://www.datasheet-pdf.com/ HY1606AP Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C Unless Otherwise Noted) Test Conditions HY1606AP Min. Typ. Max. Unit Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn- […]
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