Part Number: HY3506P
Function: 60V, 190A, N-Channel MOSFET
Package: TO-220, TO-247 Type
Manufacturer: HOOYI Semicondcutor
Images:
Description
HY3506P is N-Channel Enhancement Mode MOSFET.
Features
1. 60V, 190A : RDS(ON) = mW (typ.) @ VGS =10V
2. 100% avalanche tested
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 190 A (Tc = 25°C)
4. Maximum Power Dissipation: Pd = 306 W (Tc = 25°C)
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. Switching application
2. Power Management for Inverter Systems.
HY3506P PDF Datasheet
