HY3506P PDF Datasheet – 60V,190A, N-Ch, MOSFET – Hooyi

This post explains for the MOSFET HY3506.

The Part Number is HY3506P.

The function of this semiconductor is 60V,190A, N-Channel MOSFET.

The package is TO-220, TO-247 Type

Manufacturer: HOOYI Semicondcutor ( www.hooyi-semi.com )

Preview images :

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HY3506P transistor datasheet


HY3506P is 60V, 190A, N-Channel Enhancement Mode MOSFET.

This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.


1. RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin

2. 100% avalanche tested

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 190 A

4. Maximum Power Dissipation: Pd = 306 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

HY3506P pdf pinout



1. Switching application

2. Power Management for Inverter Systems


Other data sheets are available within the file: HY3506, HY3506W

HY3506P PDF Datasheet

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