This post explains for the MOSFET HY3506.
The Part Number is HY3506P.
The function of this semiconductor is 60V,190A, N-Channel MOSFET.
The package is TO-220, TO-247 Type
Manufacturer: HOOYI Semicondcutor ( www.hooyi-semi.com )
Preview images :
1 page
Description
HY3506P is 60V, 190A, N-Channel Enhancement Mode MOSFET.
This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
Features
1. RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin
2. 100% avalanche tested
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 190 A
4. Maximum Power Dissipation: Pd = 306 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. Switching application
2. Power Management for Inverter Systems
[…]
Other data sheets are available within the file: HY3506, HY3506W
HY3506P PDF Datasheet
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