Part Number: ICE20N170
Function: 600V, 20A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Icemos
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Description
ICE20N170 is 600V, 20A, N-Channel Enhancement Mode MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor).
This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems HALOGEN Product Summary
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 20 A
4. Total Power Dissipation: Ptot = 180 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
ICE20N170 PDF Datasheet
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