Part Number: IRF510
Function: 5.6A / 100V / 0.540 Ohm / N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Intersil Corporation
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Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.
Features
• 5.6A, 100V • rDS(ON) = 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature – TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information PART NUMBER IRF510 PACKAGE TO-220AB BRAND IRF510 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 IRF510 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF510 100 100 5.6 4 20 ±20 43 0.29 19 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . VDGR Continuous Drain Current . ID TC = 100oC ID Pulsed Drain Current (Note 3) . IDM Gate to Source VoltageVGS Maximum Power Dissipation .PD Linear Derating Factor Single Pulse Avalanche Energy Rating (Note 4) .EAS Operating and Storage Temperature Range . TJ , TSTG Maximum Temper […]
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IRF510 Datasheet
