Part Number: IRF540
Function: 100V, 23A, N-channel TrenchMOS transistor
Package: SOT-78, SOT-404 Type
Manufacturer: NXP, Philips Semiconductors
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies