J412 MOSFET, Transistor, P-Ch, 2SJ412 ( Datasheet PDF )

Part Number: J412, 2SJ412

Function: -100V, 16A, P-Channel MOSFET

Manufacturer: Toshiba Semiconductor

Images:J412 pdf pinout

Description

J412 is -100V, -16A, Silicon P Channel MOS Field Effect Transistor. 

Features

• 4-V gate drive

• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.7 S (typ.)

• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)

• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

 

J412 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 16 A

4. Drain Power Dissipation: Pd = 60 W

5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. DC-DC Converter, Relay Drive and Motor Drive

 

J412 PDF Datasheet