Part Number: J412, 2SJ412
Function: -100V, 16A, P-Channel MOSFET
Manufacturer: Toshiba Semiconductor
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Description
This is Silicon P Channel MOS Field Effect Transistor.
Features
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = – 16 A
4. Drain Power Dissipation: Pd = 60 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. DC-DC Converter, Relay Drive and Motor Drive
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