Part Number: J449, 2SJ449
Function: 250V, P-channel Power MOSFET
Package: TO-220 Type
Manufacturer: NEC
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Description
The J449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Features
• Low On-Resistance :
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 250 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Total Power Dissipation: Pd =2 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) :
CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1040 360 70 24 16 47 14 23.1 7.1 12.9 0.92 155 930 –4.0 2.0 MIN. TYP. 0.55 –4.8 3.5 –100 m 100 MAX. VGS = 0 IF = –6.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. RG = 25 Ω PG VGS = –20 → 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 Ω L VDD PG. D.U.T. RG RG = 10 Ω RL VDD VGS VGS Wave 010 % Form ID ID Wave Form 10 % 0 td (on) ton tr VGS (on) 90 % 90 % 90 % ID 10 % td (off) toff tf t = 1µs Duty Cycle ≤ 1 % Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = –2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in’s. 2 2SJ449 TYPICA […]
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