This is 500V, 12A, N-Channel Power MOSFET
Part Number: JX2N7228
Function: JEDEC REGISTERED N-CHANNEL HIGH VOLTAGE POWER MOSFET
Package : TO-254AA Type
Manufacturer: Advanced Power Technology
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Description
A N-Channel high voltage power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is designed to handle high voltage and power levels in electronic circuits. The N-Channel MOSFET is a type of transistor where the flow of current is controlled by the voltage applied to the gate terminal.
The N-Channel high voltage power MOSFET is designed for use in applications such as power supplies, motor control, lighting, and electronic switches. It is capable of handling voltage levels typically ranging from tens to hundreds of volts, and power levels ranging from a few watts to several kilowatts.
MAXIMUM RATINGS Symbol VDSS VGS ID IDM IAR Parameter Drain-Source Voltage Gate-Source Voltage TM 2N7228 500 Volt JX2N7228- JV2N7228- 0.415Ω *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N – CHANNEL HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. 2N7228 UNIT Volts 500 ±20 12 Continuous Drain Current @ TC = 100°C Pulsed Drain Current Avalanche Current 1 1 ed at R he MIN Continuous Drain Current @ TC = 25°C 8 Amps 48 12 150 Watts Total Power Dissipation @ TC = 25°C PD Total Power Dissipation @ TC = 100°C Linear Derating Factor EAS EAR TJ,TSTG TL Single Pulse Avalanche Energy Repetitive Avalanche Energy 60 1.2 750 15 -55 to 150 300 °C W/K mJ Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering Conditions: 0.063″ from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VGS(TH) IDSS IGSS ID(ON) Characteristic / Test Conditions va la nc TYP MAX UNIT Volts Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 2 4 25 250 ±100 12 0.415 0.900 0.515 A Gate Threshold Voltage (VDS = VGS, ID = 250µA) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) On State Drain Current 2 µA nA Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) 2 2 2 Drain-Source On-State Resistance RDS(ON) Drain-Source On-State Resistance Drain-Source On-State Resistance (VGS = 10V, ID = 8.0A) (VGS = 10V, ID = 8.0A, TC = 125°C) (VGS = 10V, ID = 12.0A) Ohms CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website – http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac – France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 051-5015 Rev D DYNAMIC CHARACTERISTICS Symbol CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Drain-to-Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller “) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions f = 1 MHz VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = ID [Cont.] @ 25°C VGS = 10V ID = ID [Cont.] @ 25°C RG = 2.35Ω VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX 2N7228 UNIT 12 2410 356 125 103 14 42 14 21 38 12 24 2900 pF 530 235 150 21 70 35 190 ns nC 170 130 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 12 48 1.7 296 3.5 1600 8.8 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/ µs) Reverse Recovery […]
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