Part Number: K10A500, K10A50D, TK10A500, TK10A50D
Function: Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Images:
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 264 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications
Switching Regulator
K10A500 Datasheet
