Part Number: K10A50D, TK10A50D
Function: 500V, 10A, N-Channel MOSFET ( Transistor )
Package: TO-220 Type
Manufacturer: Toshiba
Images:
Description
K10A50D is Silicon N Channel MOS Type Field Effect Transistor(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 w
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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Applications
1. Switching Regulator
K10A50D PDF Datasheet
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