K10A50D Transistor – 500V, 10A, TK10A50D ( MOSFET )

Part Number: K10A50D, TK10A50D

Function: 500V, 10A, N-Channel MOSFET ( Transistor )

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K10A50D transistor mosfet

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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K10A50D image

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 w

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

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Applications

: Switching Regulator

K10A50D Datasheet