Part Number: K10A50D, TK10A50D
Function: 500V, 10A, N-Channel MOSFET ( Transistor )
Package: TO-220 Type
Manufacturer: Toshiba
Images:
Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 w
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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Applications
: Switching Regulator