K10A60D PDF – 600V, 10A, MOSFET, TK10A60D ( Datasheet )

Part Number: K10A60D, TK10A60D

Function: 600V, N-Ch, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K10A60D transistor

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

 

Features

• Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.)

• High forward transfer admittance: |Yfs| = 6.0S (typ.)

• Low leakage current: IDSS = 10 μA (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

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K10A60D Datasheet