Part Number: K2508, 2SK2508 ( = TK13A25D )
Function: 250V, 13A, N-Channel MOSFET
Package: TO 220, TO-220SIS Type
Manufacturer: Toshiba Semiconductor
Images:
Description
This is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor
Features
1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 13 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
1 page
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
1. Drain-source voltage: VDSS =250 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V
3. Gate-source voltage: VGSS = ±20 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 148 mJ
6. Avalanche current : IAR = 13 A
7. Repetitive avalanche energy : EAR = 4.5 mJ
Pinout
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Applications:
1. Switching Regulator
2. DC-DC Converter and Motor
