This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K2545, 2SK2545
Function: 600V, 6A, MOSFET (Transistor)
Pacakge : TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Features
1. Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 5.5 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 345 mJ
6. Avalanche current : Iar = 6A
7. Repetitive avalanche energy : Ear = 4 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
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Description
Note 3 : Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient […]
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Applications
1. DC-DC Converter
2. Relay Drive and Motor Drive
K2545 Datasheet
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