This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K2611, 2SK2611
Function: Silicon N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Toshiba Semiconductor
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Description
The K2611 is TOSHIBA, Silicon N Channel MOS Type Field Effect Transistor.
Applications:
1. DC−DC Converter
2. Relay Drive and Motor Drive
Features
1. Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-10 2SK2611 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min — ±30 — 900 2.0 — 3.0 — Typ. — 1.1 7.0 2040 45 190 25 Max ±10 — 100 — 4.0 1.4 — pF Unit μA V μA V V Ω S Turn−on time Switching time Fall time ton […]
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