This post explains for the 600V, N-Channel MOSFET.
The Part Number is 2SK2699.
The function of this semiconductor is 600V, 12A, MOSFET.
The package is TO-3P Type
Manufacturer: Toshiba Semiconductor
Preview images:
Description
This is N Channel MOS Type Field Effect Transistor. N-Channel MOSFET is a type of Metal-Oxide-Semiconductor Field-Effect Transistor, mainly used in power control and switching applications. When N-Channel MOSFET is in the conducting state, electrons flow through the N-type channel.
Features
1. Low drain−source ON resistance: RDS (ON) = 0.5 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 11 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain Power Dissipation: Pd = 150 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Chopper Regulator
2. DC−DC Converter and Motor Drive