Part Number: K2700, 2SK2700
Function: 900V, 3A, MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
K2700 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Chopper Regulator
2. DC–DC Converter and Motor Drive
K2700 PDF Datasheet
