K2718 PDF Datasheet – 900V, 2.5A, MOSFET – 2SK2718

Part Number: K2718, 2SK2718

Function: 900V, 2.5A, N-Channel MOSFET

Package: TO-220NIS Type

Manufacturer: Toshiba Semiconductor


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K2718 image


K2718 is Silicon N Channel MOS Type Field Effect Transistor.


1. Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


DC−DC Converter and Motor Drive


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2.5A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  […]

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K2718 Datasheet