K3563 MOSFET – Transistor, N-Ch, 500V, 5A, 2SK3563

Part Number: K3563, 2SK3563

Function: 500V, N-Ch, MOSFET Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K3563 pdf pinout

Description

K3563 is 500V, 5A, Silicon N Channel MOS Type Field Effect Transistor. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3.5S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

K3563 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3563 PDF Datasheet