Part Number: K3563, 2SK3563
Function: 500V, N-Ch, MOSFET Transistor
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
K3563 is 500V, 5A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
2. High forward transfer admittance: |Yfs| = 3.5S (typ.)
3. Low leakage current: IDSS = 100 μA (VDS = 500 V)
4. Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5 A
4. Drain Power Dissipation: Pd = 35 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K3563 PDF Datasheet
