Part Number: K3878
Function: 900V, 9A, Field Effect Transistor
Package: TO-3PN Type
Manufacturer: Toshiba
Images:
Description
K3878 is 900V, 9A, Silicon N-Channel MOSFET (2SK3878).
Features
1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9 A
4. Total Power Dissipation: Pd = 150 W
5. Avalanche energy: Ear = 15 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K3878 PDF Datasheet
