K4212 Datasheet – 25V, 48A, N-Ch, Power MOSFET ( PDF )

Part Number: K4212


Package: TO-252 Type

Manufacturer: Renesas


1 page
K4212 datasheet pdf


The K4212 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. Low on-state resistance

(1) RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)

(2) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)

2. Low total gate charge

(1) QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

3. 4.5 V drive available

4. Avalanche capability ratings

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K4212 mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 48 A

4. Total Power Dissipation: Pd = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K4212 Datasheet PDF

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