Part Number: K4212
Function: 25V, 48A, MOS FIELD EFFECT TRANSISTOR
Package: TO-252 Type
Manufacturer: Renesas
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Description
The K4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
1. Low on-state resistance
(1) RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
(2) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
2. Low total gate charge
(1) QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
3. 4.5 V drive available
4. Avalanche capability ratings […]
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 48 A
4. Total Power Dissipation: Pd = 1 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C