K4A60DA PDF Datasheet – 600V, 3.5A, N-Ch, MOSFET

Part Number: K4A60DA, TK4A60DA

Function: 600V, 3.5A, N-Channel, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

1 page
transistor K4A60DA pdf datasheet

Description

K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

3 page
mosfet K4A60DA equivalent

Applications:

1. Switching Regulator

 

K4A60DA PDF Datasheet

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