Part Number: K4A60DA, TK4A60DA
Function: 600V, 3.5A, N-Channel, MOSFET, Transistor
Package: TO-220 Type
Manufacturer: Toshiba
Images:
1 page
Description
K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
3. Low leakage current: IDSS = 10 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3.5 A
4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
3 page
Applications:
1. Switching Regulator
K4A60DA PDF Datasheet
Posts related to ‘ MOSFET ‘
| Part number | Description |
| K11A60D | 600V, 11A, MOSFET – TK11A60D |
| 4407A | AO4407A (30V, P-Ch, MOSFET) |
| 2SK2373 | 2SK2373 MOSFET – 30V, 0.2A, Transistor ( Datasheet PDF ) |
| 60T03GP | 30V, 45A, MOSFET, Transistor |
| APM2518NU | APM2518NU PDF – 25V, 50A, N-Channel Mode MOSFET |
| K7A60W | 600V, 7A, N-ch, MOSFET, TK7A60W |
| K1923 | MOSFET, 600V, 4A, Transistor, TO-220AB |
| MOSFET | 30V, 50A, SinoPower ( PDF ) |
| IRFP460 | 500V, 20A, Power MOSFET – IXYS |
| 2SK3061 | N-Ch, 60V, 70A, MOSFET |