Part Number: K4B2G1646C
Function: 2Gb, DDR3 SDRAM
Package: 96 FBGA Type
Manufacturer: Samsung semiconductor
Images:
Description
The 2Gb DDR3 SDRAM C-die is organized as a 16Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. […]
Features
1. 8 Banks
2. Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
3. Programmable Additive Latency: 0, CL-2 or CL-1 clock
4. 8-bit pre-fetch
5. Bi-directional Differential Data-Strobe
K4B2G1646C Datasheet
