K50H603 PDF Datasheet – 600V, High Speed IGBT, Transistor

This post explains for the IGBT K50H603 transistor.

The IGBT is insulated-gate bipolar transistor.

The Part Number is K50H603. Full Part Name is IKW50N60H3.

The function of this semiconductor is 600V, 50A, IGBT.

Manufacturer: Infineon Technologies

K50H603 pinout and Images

K50H603 IGBT Transistor

Description

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control K50H603 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology

Features

TRENCHSTOPTM technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:

• uninterruptible power supplies • welding converters • converters with high switching frequency  Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C IKW50N60H3 600V 50A 1.85V Tvjmax 175°C Marking K50H603 Package PG-TO247-3 2 Rev. 2.2, 2014-03-12 IKW50N60H3 High speed switching […]

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pinout

K50H603 Datasheet