K6A600 PDF – K6A60D, 600V, 6A, N-Channel MOSFET

What is K6A600?

K6A60D is the correct part name. The K6A600 MOSFET is an N-channel device with a maximum drain-source voltage rating of 600 volts and a maximum continuous drain current rating of 6 amperes. It has a low on-resistance and fast switching speed, making it suitable for high-power switching applications.

Marking Code: K6A600, TK6A600

Corrector number : K6A60D, TK6A60D

Function: 600V, 6A, N-Channel MOSFET

Pacakage : TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

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 K6A600 image

 

Description

This is Silicon N-Channel MOS Type Field Effect Transistor. The K6A600 MOSFET is commonly used in electronic circuits that require high voltage and high current, such as power supplies, motor control circuits, and lighting systems.

Features

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

K6A600 Datasheet