K6A60D Datasheet – 600V, 6A, N-ch, MOSFET – Toshiba ( PDF )

This post explains for the MOSFET.

The Part Number is K6A60D, K6A600, TK6A60D.

The function of this semiconductor is 600V, 6A, N-Ch, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

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K6A60D image

Description

The K6A60D is Silicon N Channel MOS Type Field Effect Transistor.

Features

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

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pinout

Applications:

1. Switching Regulator

 

K6A60D Datasheet