K6A60D PDF Datasheet – 600V, 6A, N-ch, MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K6A60D, K6A600, TK6A60D.

The function of this semiconductor is 600V, 6A, N-Ch, MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Preview images :

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K6A60D pdf pinout


The K6A60D is Silicon N Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


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K6A60D datasheet mosfet


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



1. Switching Regulator

2. N-channel MOSFETs are often used in power management circuits and battery protection circuits.


K6A60D PDF Datasheet