Part Number: K6A60D, K6A60DR
Function: 600V, 6A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
This is 600V, 6A, Silicon N-Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 3.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain peak current : ID(pulse) = 24 A
5. Drain power dissipation (Tc = 25°C) : Pd = 40 W
6. Avalanche current : IAR = 6 A
7. Repetitive avalanche energy : Ear = 4.0 mJ
8. Storage temperature: Tstg = +150 °C
Applications:
1. Switching Regulator
K6A60D Datasheet
