K6A65D PDF Datasheet – N-Ch, 650V, 6A, MOSFET ( TK6A65D )

Part Number: K6A65D, TK6A65D

Function: 650V, 6A, Silicon N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K6A65D pdf mosfet

Description

The K6A65D is 650V, Silicon N-Channel MOSFET.

The K6A65D is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.

The TK6A65D has a maximum drain-source voltage of 650V and a maximum drain current of 6A,
making it suitable for high voltage, high current applications.

Features

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)

4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain peak current : ID(pulse) = 24 A
5. Drain power dissipation = 45 W
6. Single pulse avalanche energy = 281 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature: Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C

Applications:

1. Switching Regulator

K6A65D PDF Datasheet

K6A65D pdf

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