K9F2G08U0C PDF Datasheet – 2Gb C-die NAND Flash Memory

Part Number: K9F2G08U0C

Function: 2Gb (256Mx8bit) NAND Flash Memory

Package: TSOP1 48 Pin, 63FBGA Type

Manufacturer: Samsung



ffered in 256Mx8bit, the K9F2G08U0C is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.  [ .]


1. Voltage Supply : 3.3V device(K9F2G08U0C): 2.70V ~ 3.60V

2.  Organization
(1) Memory Cell Array : (256M + 8M) x 8bit
(2) Data Register : (2K + 64) x 8bit

3. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (128K + 4K)Byte

K9F2G08U0C Datasheet