Part Number: MP1008-G
Function: 10A, 800V, Silicon Bridge Rectifier
Manufacturer: Comchip Technology
Images:
Description
The MP1008-G is 10A, 800V, Silicon Bridge Diode.
Features
1. Diffused Junction
2. High Current Capability
3. High Case Dielectric Strength
4. High Surge Current Capability
5. Ideal for Printed Circuit Board Application
6. Plastic Material has Underwriters
7. Laboratory Flammability Classification 94V-0
Mechanical Data
Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 5.4 grams (approx.) Mounting position: Through Hole for #6 Screw D E Dim A B C D E C B Metal Heat Sink KBP Min. Max 14.73 15.75 5.80 6.90 19.00 1.00 O Typical 6.14 5.11 Hole for #6 screw G 3.60 4.00 J 10.30 11.30 2.38×45ºC Typical I All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC MP MP MP MP KBP KBP KBP Symbol 1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 10 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM Half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.3ms) (Note2) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Typical Junction Capacitance […]
MP1008-G PDF Datasheet
