P55NE06 PDF Datasheet – 60V, MOSFET – STP55NE06

This post explains for the power MOSFET.

The Part Number is P55NE06, STP55NE06.

The function of this semiconductor is 60V, 55A, N-channel enhancement mode MOSFET.

The package is TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Preview images :P55NE06 pdf pinout

Description

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.019 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

5. HIGH dv/dt CAPABILITY

6. APPLICATION ORIENTED CHARACTERIZATION

P55NE06 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Allowable Power Dissipation: Pd = 130 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -65 to +175 °C

Applications:

1. DC MOTOR CONTROL

2. DC-DC & DC-AC CONVERTERS

3. SYNCHRONOUS RECTIFICATION

 

 

P55NE06 PDF Datasheet