Part Number: P65NF06, STP65NF06
Function: N-channel, 60V, 60A, MOSFET (Transistor)
Package: DPAK, TO-220 type
Images: 1 page
This is N-channel 60V, 11.5mΩ, Power MOSFET.
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 60 A
4. Drain power dissipation : Ptot = 110 W
5. Single pulse avalanche energy : Eas = 390 mJ
6. Channel temperature: Tch = 175 °C
7. Storage temperature: Tstg = -55 to +175 °C