This post explains for the MOSFET P75N02LDG.
The Part Number is P75N02LDG.
The Package is TO-252 Type.
The function of this transistor is N-Channel MOSFET (25V, 75A).
Manufacturer: UNIKC Semiconductor
Images:
Description
N-Channel Enhancement Mode MOSFET
1 page
PRODUCT SUMMARY
1. V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L = 0.1mH EAS 100 Power Dissipation TC = 25 °C TC = 100 °C PD 54 32.75 Operating Junction & Storage Temperature Range Lead Temperature (1/16″ from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.6 MAXIMUM 2.3 62.5 UNITS °C / W Ver 1.1 1 2013-3-13 P75N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted) PARAMETER SYMBOL TEST CO […]
Absolute Maximum Ratings (Tc = 25°C)
1. Gate to source voltage : VGS = ± 20 V
2. Drain current: ID = 75 A
3. Drain power dissipation : PD = 54 W
4. Single pulse avalanche energy : Eas = 100 mJ
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C
