P75N02LDG PDF – N-Ch, 25V, 75A, MOSFET (Transistor)

This post explains for the MOSFET.

The Part Number is P75N02LDG.

The Package is TO-252 Type.

The function of this transistor is N-Channel MOSFET (25V, 75A).

Manufacturer: UNIKC Semiconductor


P75N02LDG transistor mosfet


The P75N02LDG is N-Channel Enhancement Mode MOSFET.

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.

P75N02LDG pinout datasheet



1. V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L = 0.1mH EAS 100 Power Dissipation TC = 25 °C TC = 100 °C PD 54 32.75 Operating Junction & Storage Temperature Range Lead Temperature (1/16″ from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.6 MAXIMUM 2.3 62.5 UNITS °C / W Ver 1.1 1 2013-3-13 P75N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted) PARAMETER SYMBOL TEST CO […]

Absolute Maximum Ratings (Tc = 25°C)

1. Gate to source voltage : VGS = ± 20 V
2. Drain current: ID =  75 A
3. Drain power dissipation : PD = 54 W
4. Single pulse avalanche energy : Eas = 100 mJ
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C


P75N02LDG PDF Datasheet

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